PART |
Description |
Maker |
RJK03R4DPA RJK03R4DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03C5DPA-00-J5A RJK03C5DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
MCH5818 |
Pch SBD MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
FCH08A15 |
SBD DUAL DIODES
|
ETC
|
D4SBS6 |
Schottky Rectifiers (SBD) / SBD Bridges
|
Shindengen
|
FRH20A15 |
SBD DUAL DIODES - ANODE COMMON
|
NIEC[Nihon Inter Electronics Corporation] ETC
|
EA60QC03L |
SBD DUAL DIODES CATHODE COMMON
|
ETC NIEC[Nihon Inter Electronics Corporation]
|
M1FH3 |
Schottky Rectifiers (SBD) / Single (Surface Mount) SCHOTTKY RECIFIERS (SBD)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
PT2390 PT2390-S |
Echo IC with Built in Michrophone Amplifier and Output Mixer Echo IC with Built-in Microphone Amplifier & Output Mixer 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3711Z with Lead Free Packaging
|
Princeton Technology Co... Princeton Technology Corporation PTC
|